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データシートサーチシステム |
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データシートサーチシステム |
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IRFS630A データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRFS630A データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRFS630A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6.5 A IDM Drain Current-Single Pluse 36 A PD Total Dissipation @TC=25℃ 38 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.33 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W PDF pdfFactory Pro www.fineprint.cn |
同様の部品番号 - IRFS630A |
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同様の説明 - IRFS630A |
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