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BUL49D データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUL49D データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification 1 isc website:www.iscsemi.cn isc Silicon NPN Power Transistor BUL49D DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.3V(Max) @ IC= 1.0A ·Very High Switching Speed APPLICATIONS ·Electronic transformers for halogen lamps ·Flyback and forward single transistor low power converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5 A ICM Collector Current-peak tp<5ms 10 A IB Base Current-Continuous 2 A IBM Base Current-peak tp<5ms 4 A PC Collector Power Dissipation TC=25℃ 80 W Ti Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W |
同様の部品番号 - BUL49D |
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同様の説明 - BUL49D |
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