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CPC3720 データシート(PDF) 1 Page - IXYS Corporation |
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CPC3720 データシート(HTML) 1 Page - IXYS Corporation |
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1 / 5 page ![]() PRELIMINARY INTEGRATED CIRCUITS DIVISION PRELIMINARY DS-CPC3720-R00J 1 CPC3720 350V N-Channel Depletion-Mode FET V (BR)DSX / V (BR)DGX R DS(on) (max) I DSS (min) Package 350V P 22 130mA SOT-89 Applications Features Description Ordering Information Package Pinout • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply • Offers Low R DS(on) at Cold Temperatures • R DS(on) 22 max. at 25ºC • High Input Impedance • High Breakdown Voltage: 350V P • Low V GS(off) Voltage: -1.6 to -3.9V • Small Package Size SOT-89 The CPC3720 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications. The CPC3720 is a highly reliable FET device that has been used extensively in our solid state relays for industrial and telecommunications applications. This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3720 offers a low, 22 maximum, on-state resistance at 25ºC. The CPC3720 has a minimum breakdown voltage of 350V P , and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Circuit Symbol S G D (SOT-89) G D S D Part # Description CPC3720CTR N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel (1000/Reel) |
同様の部品番号 - CPC3720 |
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同様の説明 - CPC3720 |
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