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CPC3909 データシート(PDF) 2 Page - IXYS Corporation

部品番号 CPC3909
部品情報  Depletion-Mode FET
PDF  7 Pages
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メーカー  IXYS [IXYS Corporation]
ホームページ  http://www.ixys.com
Logo IXYS - IXYS Corporation

CPC3909 データシート(HTML) 2 Page - IXYS Corporation

  CPC3909 Datasheet HTML 1Page - IXYS Corporation CPC3909 Datasheet HTML 2Page - IXYS Corporation CPC3909 Datasheet HTML 3Page - IXYS Corporation CPC3909 Datasheet HTML 4Page - IXYS Corporation CPC3909 Datasheet HTML 5Page - IXYS Corporation CPC3909 Datasheet HTML 6Page - IXYS Corporation CPC3909 Datasheet HTML 7Page - IXYS Corporation  
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PRELIMINARY
INTEGRATED CIRCUITS DIVISION
PRELIMINARY
2
R00D
CPC3909
Electrical Characteristics @25oC (Unless Otherwise Specified)
Absolute Maximum Ratings @ 25ºC
Thermal Resistance
Device
Parameter
Symbol
Conditions
Min
Typ
Max
Units
SOT-89 (CPC3909C)
Junction to Case
RJC
--
-
50
ºC/W
Junction to Ambient
RJA
90
SOT-223 (CPC3909Z) Junction to Case
RJC
--
-
14
Junction to Ambient
RJA
55
Parameter
Ratings
Units
Drain-to-Source Voltage (V
(BR)DSX)
400
V
Gate-to-Source Voltage (V
GS)15
V
Total Package Dissipation 1
SOT-89
1.1
W
SOT-223
2.5
Operational Temperature
-40 to +110
oC
Storage Temperature
-40 to +125
oC
1 Mounted on 1"x1" FR4 board.
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Typical values are characteristic of the device at +25°C, and
are the result of engineering evaluations. They are provided for
information purposes only, and are not part of the manufacturing
testing requirements.
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Gate-to-Source Off Voltage
V
GS(off)
I
D=1A, VDS=5V
-1.4
-
-3.1
V
Drain-to-Source Leakage Current
I
DS(off)
V
GS= -5.5V, VDS=240V
-
-
20
nA
V
GS= -5.5V, VDS=400V
-
-
1
A
Drain Current
I
D
V
GS= 0V, VDS=5V
300
-
-
mA
On-Resistance
R
DS(on)
V
GS= 0V, IDS=300mA
-
4.5
6
Gate Leakage Current
I
GSS
V
GS=15V
-
-
100
nA
Gate Capacitance
C
ISS
V
DS= VGS=0V
-
-
275
pF



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