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SS275LSOT データシート(PDF) 3 Page - SEC Electronics Inc. |
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SS275LSOT データシート(HTML) 3 Page - SEC Electronics Inc. |
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3 / 6 page ![]() SS275 CMOS Omnipolar High Sensitivity Micropower Hall Switch 3 V3.10 Nov 1, 2013 DC Electrical Characteristics DC Operating Parameters: TA = 25°C, VDD=5V. Parameter Symbol Test Conditions Min Typ Max Units Operating voltage VDD Operating 3.5 24 V Supply current IDD B < BRP 5 mA Output Saturation Volt- age VDSon IOUT = 20mA, B > BOP 0.5 V Output Leakage Current IOFF B < BRP VOUT = 24V 1 10 µA Output Rise Time tr RL = 1k Ω, C L = 20pF 0.25 µs Output Fall Time tf RL = 1k Ω, C L = 20pF 0.25 µs Maximum Switching Frequency FSW --- 10 KHz Package Thermal Re- sistance RTH Single layer (1S) Jedec board 301 °C/W Operating Parameters: TA = 25°C, VDD=5VDC. PARAMETER Symbol Min Type Max Units Operating Point Bop - +/-35 +/-60 Gs Release Point Brp +/-10 +/-20 - Gs Hysteresis Bhys - 15 - Gs ESD Protection Human Body Model (HBM) tests according to: Mil. Std. 883F method 3015.7 Parameter Symbol Limit Values Unit Notes Min Max ESD Voltage VESD ±2 ±4 kV ESD Precautions Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro Static Discharge control procedures whenever handling semiconductor products. |
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