SS2412

CMOS High Sensitivity Micropower Hall Latch

2

V3.10

Nov 1, 2013

General Description

The SS2412 latching Hall effect sensor IC is fabri-

cated from mixed signal CMOS technology. It incor-

porates advanced chopper-stabilization techniques to

provide accurate and stable magnetic switch points.

The circuit design provides an internally controlled

clocking mechanism to cycle power to the Hall ele-

ment and analog signal processing circuits. This

serves to place the high current-consuming portions

of the circuit into a “Sleep” mode. Periodically the

device is “Awakened” by this internal logic and the

magnetic flux from the Hall element is evaluated

against the predefined thresholds. This device re-

quires the presence of both south and north polarity

magnetic fields for operation. In the presence of a

south polarity field of sufficient strength, the device

output latches on, and only switches off when a north

polarity field of sufficient strength is present.

While in the “Sleep” cycle the output transistor is

latched in its previous state. The design has been op-

timized for service in applications requiring extended

operating lifetime in battery powered systems.

Glossary of Terms

MilliTesla (mT), Gauss

Units of magnetic flux density: 1mT = 10 Gauss

RoHS

Restriction of Hazardous Substances

Magnetic flux density applied on the branded side of the package

Magnetic flux density applied on the branded side of the package