BUW51 datasheet(1/2 Pages) ISC

部品番号	BUW51

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon NPN Power Transistor

BUW51

DESCRIPTION

·High Current Capability

·Fast Switching Speed

·Low Saturation Voltage and High Gain

APPLICATIONS

·Designed for use in general purpose power amplifier

applications.

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEV

Collector-Emitter Voltage

(VBE= -1.5V)

300

V

VCEO

Collector-Emitter Voltage

200

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

20

A

ICM

Collector Current-Peak

28

A

IB

Base Current-Continuous

4

A

IBM

Base Current-peak

7

A

PC

Collector Power Dissipation

@TC=25℃

150

W

Tj

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-65~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.0

℃/W

同様の部品番号 - BUW51

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