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BUX12P データシート(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUX12P データシート(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor BUX12P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 250 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 1.25A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A ;IB= 1.25A 1.5 V ICEO Collector Cutoff Current VCE= 200V; IB= 0 1.5 mA ICEX Collector Cutoff Current VCE= 300V;VBE= -1.5V VCE= 300V;VBE= -1.5V;TC=125℃ 1.5 6.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 5A ; VCE= 4V 20 60 hFE-2 DC Current Gain IC= 10A ; VCE= 4V 10 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 15V, ftest= 10MHz 8 MHz Switching Times ton Turn-on Time IC= 10A ;IB1= 1.25A; VCC= 150V 1.0 μs ts Storage Time IC= 10A ;IB1= -IB2= 1.25A; VCC= 150V 2.0 μs tf Fall Time 0.5 μs |
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