3.4

+0.3

-0.1

0.4±0.1

Cathode indification

FEATURES

Silicon epitaxial planar diode

High speed switching diode

500 mW power dissipation

Weight:

0.031 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at ２５ ambient temperature unless otherwise specified.

MAXIMUM RATINGS

UNITS

Reverse voltage

V

Peak reverse voltage

V

Average forw ard rectified current

half w ave rectification w ith resistive load

µ s

A

Pow er dissipation

@ T

mW

Junction temperature

Storage temperature range

ELECTRICAL CHARACTERISTICS

UNITS

Forw ard voltage @ I

V

Leakage current

@ V

nA

@ V

T

μA

Capacitance

@ V

pF

Reverse breakdo

wn voltage

tested with 5μA pulses

Reverse recovery time

from I

ns

from I

ns

Thermal resistance junction to ambient

K/W

Rectification efficiency @ 100MHz,V

ηv

-

-

-

MIN

TYP

175

-55 --- +175

1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.

4

2

75.0

-

-

0.45

-

-

MAX

2

.0

-

-

-

-

2.0

mA

-

0.8

1

.0

-

LL4151

MECHANICAL DATA

SMALL SIGNAL SWITCHING DIODE

Case: MINI-MELF,glass case

REVERSE VOLTAGE : 50 V

CURRENT: 0.15 A

Polarity: Color band denotes cathode

MINI-MELF

1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

-

50

50

V

LL4151

50

75

Dimensions in millimeters

Diode Semiconductor Korea

www.diode.kr