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2N7002 データシート(PDF) 2 Page - Formosa MS

部品番号 2N7002
部品情報  N-Channel SMD MOSFET
PDF  8 Pages
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メーカー  FORMOSA [Formosa MS]
ホームページ  http://www.formosams.com
Logo FORMOSA - Formosa MS

2N7002 データシート(HTML) 2 Page - Formosa MS

  2N7002 Datasheet HTML 1Page - Formosa MS 2N7002 Datasheet HTML 2Page - Formosa MS 2N7002 Datasheet HTML 3Page - Formosa MS 2N7002 Datasheet HTML 4Page - Formosa MS 2N7002 Datasheet HTML 5Page - Formosa MS 2N7002 Datasheet HTML 6Page - Formosa MS 2N7002 Datasheet HTML 7Page - Formosa MS 2N7002 Datasheet HTML 8Page - Formosa MS  
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Package outline
Page 2
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
N-Channel SMD MOSFET
Formosa MS
Features
In compliance with EU RoHS 2002/95/EC directives.
Suffix "-H" indicates Halogen-free part, ex. 2N7002-H.
Super high density cell design for extremely low R
Exceptional on-resistance and maximum DC current capability
Rugged and reliable
High saturation current capability
DS(ON)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case :
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Mounting Position : Any
Molded plastic, SOT-23
Weight : Approximated 0.008 gram
60V N-Channel Enhancement
Mode MOSFET
PARAMETER
Drain-source voltage
Drain-gate voltage(R
= 1.0M )
GS
Ω
Drain current continuous
(Note 1)
(Note 1)
-
T=25 C
T =100 C
A
A
o
o
Total power dissipation FR-5 board
T=25 C
A
o
(Note 3)
Gate–source voltage continuous
-
Operation junction and storage temperature range
Symbol
V
DSS
V
DGR
P
D
T, T
J
STG
R
θ
JA
MIN.
-55
TYP.
MAX.
60
60
1.8
+150
556
UNIT
V
V
o
C
o
C/W
M
aximum ratings (AT T =25 C unless otherwise noted)
A
o
V
GS
I
D
225
±20
±115
V
mA
mW
Thermal resistance, junction to ambient
2N7002
-pulsed (Note 2)
I
DM
-non–repetitive ()
tp
50 s
≤μ
V
GSM
Derate above 25 C
O
mW/ C
O
±40
±800
Document ID
Issued Date
Revised Date
Revision
Page.
SOT-23
Dimensions in inches and (millimeters)
0.035 (0.89)
0.051 (1.30)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
(A)
(B)
(C)
Vpk
±75
Note 1 The Power Dissipation of the package may result in a lower continuous drain current
2 Pulse Test Pulse Width
300 s Duty Cycle
2 0
3 FR 5
1 0 x 0 75 x 0 062 in
4 Alumina
0 4 x 0 3 x 0 025 in 99 5
alumina
:
.
::
,
. %.
:– = .
.
.
.
:
= ...
. %
≤≤
μ
P
D
R
θ
JA
2.4
417
o
C/W
300
mW
Thermal resistance, junction to ambient
Derate above 25 C
O
mW/ C
O
Total power dissipation
T=25 C
A
o
alumina substrate Note 4
,(
)
DS-251104
2008/02/10
2015/06/09
H
8
Applications
Power Management in Note book
Portable Equipment
Battery Powered System
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