.6

.4

.8

1.0

1.2

1.4

1.6

1.8

0.01

0.1

1

10

100

Tj=25 C

Pulse Width=300 s

1% Duty Cycle

o

FIG.2 -- TYP ICAL FORW ARD CHARACTERIS TIC

FIG.3 -- FORW ARD DERATING CURV E

z

FIG.4 -- TYP ICAL JUNCTION CAP ACITANCE

FIG.5 -- P EAK FORW ARD S URGE CURRENT

CASE TE M P E RA TURE ,

NUM B E R OF CY CLE S A T 60Hz

RE V E RS E V OLTA GE ,V OLTS

USF1010C---USF1060C

FIG.1 -- TES T CIRCUIT DIAGRAM AND REV ERS E RECOV ERY TIM E CHARACTERIS TIC

SE T TIM E BA SE FOR 10 ns /c m

N OTES:1 .R ISE TIME = 7n s MAX.IN PU T IMPED AN C E = 1M

.2 2p F.

.

INS TA NTA NE OUS FORW A RD V OLTA GE , V OLTS

-1 .0 A

-0 .2 5 A

0

+ 0 . 5 A

1c m

T

1

2

4

6

10

20

40

60

100

200

0.1 0.2

0.4

1

2

4

10

40

100

20

USF1030C-

USF1010C--

PULSE

GENERATOR

(NOTE2)

D.U.T.

1

NONIN-

DUCTIVE

50

N 1.

10

N1.

OSCILLOSCOPE

(NOTE 1)

(+)

25VDC

(approx)

(-)

2.0

4.0

0

25

50

75

100

125

150

Single Phase

Resistive or

Inductive Load

0

175

6.0

8.0

10

12

0

24

72

1

10

100

36

5

8.3msSingleHalf

Sine-Wave

50

60

48

12

84

USF1020C

USF1060C

Diode Semiconductor Korea

www.diode.kr