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データシートサーチシステム |
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MBR830 データシート(PDF) 2 Page - Diode Semiconductor Korea |
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MBR830 データシート(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 2 page  0 20 40 60 80 100 0.01 0.1 1 10 0.001 40 MBR830-MBR860 MBR880-MBR8100 T C =125 TC=25 TC=125℃ 0.01 50 0.1 1 10 0 Pulse width=300 s 1% Duty Cycle TC=25℃ MBR830-MBR845 MBR850-MBR860 .1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 MBR880-MBR8100 25 150 1 10 100 125 100 75 50 175 TJ=TJmax. 8.3ms Single Half Sine Wave (JEDEC Method) 10 8 6 4 2 0 0 50 100 150 Resistive or inductive Load MBR830---MBR8100 FIG.3 -- TYPICAL INSTANTANEOUS FORWARD 11111v CHARACTERISTIC PERLEG FIG.4 -- TYPICAL REVERSE CHARACTERISTICS CASE TEMPERATURE PERCENT OF RATED PEAK REVERSE VOLTAGE, FIG.1 -- FORWARD CURRENT DERATING CURVE FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PERLEG NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS www.diode.kr Diode Semiconductor Korea |
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