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RN3Z データシート(PDF) 1 Page - Diode Semiconductor Korea

部品番号 RN3Z
部品情報  HIGH EFFICIENCY RECTIFIER
PDF  2 Pages
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メーカー  DSK [Diode Semiconductor Korea]
ホームページ  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

RN3Z データシート(HTML) 1 Page - Diode Semiconductor Korea

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FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,1.15 grams
Mounting position: Any
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
UNITS
Maximum recurrent peak reverse voltage
VRRM
Maximum RMS voltage
VRMS
Maximum DC blocking voltage
VDC
Maximum average forw ard rectified current
9.5mm lead length,
@T
A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J=125
Maximum instantaneous forw ard voltage
@ 3.0 A
VF
V
Maximum reverse current
@T
A=25
at rated DC blocking voltage
@T
A=100
Maximum reverse recovery time
(Note1)
trr
ns
Typical junction capacitance
(Note2)
CJ
pF
Typical thermal resistance
(Note3)
RθJA
/W
Operating junction temperature range
TJ
Storage temperature range
TSTG
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
IFSM
80.0
200
140
RN3Z
RN3Z(Z)
A
50.0
Easily cleaned with alcohol,Isopropanol
and similar solvents
IF(AV)
3.0
HIGH EFFICIENCY RECTIFIER
VOLTAGE RANGE: 200 V
CURRENT: 3.0 A
The plastic material carries U/L recognition 94V-0
DO - 27
3. Thermal resistance f rom junction to ambient.
IR
200
50
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
30
1000.0
NOTE: 1. Measured with I
F=0.5A, IR=1A, Irr=0.25A.
- 55 ---- + 150
- 55 ---- + 150
V
0.92
A
70
Dimensions in millimeters
www.diode.kr
Diode Semiconductor Korea


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