AM6520C datasheet(1/3 Pages) ANALOGPOWER

部品番号	AM6520C

部品情報	P & N-Channel 20-V (D-S) MOSFET

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AM6520C

Analog Power

November, 2005 - Rev. A

PRELIMINARY

Publication Order Number:

DS-AM6520_A

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r

DS(on) assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

P & N-Channel 20-V (D-S) MOSFET

•Low r

DS(on) Provides Higher Efficiency and

Extends Battery Life

•

Miniature TSSOP-8 Surface Mount Package

Saves Board Space

•

High power and current handling capability

•

Low side high current DC-DC Converter

applications

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol N-Channel P-Channel Units

VDS

20

-20

VGS

8-8

TA=25

oC

4.7

-4.7

TA=70

oC3.8

-3.8

IDM

±50

IS

2.3

-2.3

A

TA=25

oC

2.1

TA=70

oC1.3

1.3

TJ, Tstg

-55 to 150

oC

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

TSSOP-8

Top View

D1

S1

1

2

3

D

1

S

1

G

1

N-Channel MOSFET

4

G1

D2

S2

8

7

6

5

G2

S

2

D

2

G

2

P-Channel MOSFET

VDS (V)

rDS(on) m(Ω)ID (A)

47 @ VGS = 4.5V

4.7

66 @ VGS = 2.5V

3.9

95 @ VGS = 1.8V

3.3

47 @ VGS = -4.5V

-4.7

72 @ VGS = -2.5V

-3.8

95 @ VGS = -1.8V

-3.3

20

PRODUCT SUMMARY

-20

Symbol

Typ

Max

t <= 10 sec

72

83

Steady State

100

120

THERMAL RESISTANCE RATINGS

Maximum Junction-to-Ambient

a

oC/W

RthJA

Parameter

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