2SC4672 datasheet(1/2 Pages) HOTTECH

部品番号	2SC4672

部品情報	Plastic-Encapsulate Transistors

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メーカー	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

ホームページ	http://www.hottech.net.cn/

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Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

• Low saturation voltage, typically VCE (sat) =0.1V at

IC/IB =1A /50mA.

• Excellent DC current gain characteristics.

• Complements the 2SA1797.

Maximum Ratings (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

6

V

Collector Current -Continuous

IC

2

A

Collector Power dissipation

PC

0.5

W

Storage Temperature

Tstg

-55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=

50μA,IE=0

60

V

Collector-emitter breakdown voltage

VCEO

IC=

1mA,IB=0

50

V

Emitter-base breakdown voltage

VEBO

IE=

50μA,IC=0

6

V

Collector cut-off current

ICBO

VCB=

60V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=

5V,IC=0

0.1

μA

DC current gain

hFE

VCE=

2V,IC=0.5A

82

270

Collector-emitter saturation voltage

VCE(sat)

IC=

1A,IB=50mA

0.35

V

Transition frequency

fT

VCE=

2V,IC=500mA,f=100MHz

210

MHz

Collector output capacitance

Cob

VCB=

10V,IE=0,f=1MHz

25

pF

CLASSIFICATION OF hFE

Rank

P

Q

Range

80-180

120-270

Marking

KDP

DKQ

2SC4672 (NPN)

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

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