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LM4853 データシート(PDF) 3 Page - National Semiconductor (TI) |
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LM4853 データシート(HTML) 3 Page - National Semiconductor (TI) |
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3 / 17 page ![]() Absolute Maximum Ratings (Note 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage 6.0V Storage Temperature −65˚C to +150˚C ESD Susceptibility (Note 4) 3.5kV ESD Machine model (Note 7) 250V Junction Temperature (T J) 150˚C Solder Information (Note 1) Small Outline Package Vapor Phase (60 sec.) 215˚C Infrared (15 sec.) 220˚C Thermal Resistance θ JA (typ) — MUB10A 194˚C/W θ JC (typ) — MUB10A 52˚C/W θ JA (typ) — LDA14A (Note 10) 56˚C/W θ JC (typ) — LDA14A 4.3˚C/W Operating Ratings (Note 2) Temperature Range −40˚C ≤ to 85˚C Supply Voltage V DD 2.4V ≤ V DD ≤ 5.5V Note 1: See AN-450 "Surface Mounting and their effects on Product Reli- ability" for other methods of soldering surface mount devices. Electrical Characteristics (Notes 2, 8) The following specifications apply for V DD= 5.0V, TA= 25˚C unless otherwise specified. Symbol Parameter Conditions LM4853 Units (Limits) Typical (Note 5) Limit (Note 6) V DD Supply Voltage 2.4 V (min) 5.5 V (max) I DD Supply Current BTL Mode; V IN = 0V; IO = 0A 2.4 7.0 mA SE Mode; V IN = 0V; IO = 0A 2.4 7.0 mA I SD Shutdown Current SD Mode; V SHUTDOWN =VDD 18 µA V OS Output Offset Voltage BTL Mode; A V =2 BTL OUT+ to BTL OUT− 5.0 40 mV P O Output Power BTL Mode; R L =3 Ω THD+N = 1%; LM4853LD 1.9 W BTL Mode; R L =4 Ω THD+N = 1%; LM4853LD 1.7 W BTL Mode; R L =4 Ω THD+N = 1%; LM4853MM 1.5 W BTL Mode; R L =8 Ω THD+N = 1%; LM4853MM, LD 1.1 W SE Mode; R L =8 Ω THD+N = 1%; LM4853MM, LD 300 mW SE Mode; R L =32 Ω THD+N = 1%; LM4853MM, LD 95 mW V IH Shutdown Input Voltage High Is < 80µA 2.0 V (min) V IL Shutdown Input Voltage Low Is > 0.5mA 0.8 V (max) Crosstalk Channel Seperation SE Mode, R L =32 Ω; f = 1kHz 73 dB www.national.com 3 |
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