2SC2712 datasheet(1/2 Pages) HOTTECH

部品番号	2SC2712

部品情報	Plastic-Encapsulate Transistors

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メーカー	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

ホームページ	http://www.hottech.net.cn/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Low Noise: NF=1 dB (Typ),10dB(MAX)

Complementary to 2SA1162

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

60

V

Collector-Emitter Voltage

V

CEO

50

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current -Continuous

I

C

150

mA

Collector Power Dissipation

PC

200

mW

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC= 100μA, IE=0

60

V

Collector-emitter breakdown voltage

VCEO

IC=1mA ,

IB=0

50

V

Emitter-base breakdown voltage

VEBO

IE= 100μA, IC=0

5

V

Collector cut-off current

ICB

O

VCB= 60 V, IE=0

0.1

μA

Emitter cut-off current

IEB

O

VEB=5V, IC=0

0.1

μA

DC current gain

hFE

VCE=6V, IC=2mA

70

700

Collector-emitter saturation voltage

VCE(sat)

IC= 100mA, IB=10mA

0.1

0.25

V

Transition frequency

fT

VCE=10V, IC= 1mA

80

MHz

Output capacitance

Cob

VCB=10V, IE=0,f=1 MHz

2.0

3.5

pF

Noise Figure

NF

VCE=6V,IC=0.1mA,f=1kH

z, Rg=10kΩ

1.0

10

dB

CLASSIFICATION OF

hFE

Marking

LO

LY

LG

LL

Range

70-140

120-240

200-400

350-700

(NPN)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

2SC2712

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