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TLE7183QUSCD3 データシート(PDF) 15 Page - Infineon Technologies AG |
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TLE7183QUSCD3 データシート(HTML) 15 Page - Infineon Technologies AG |
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15 / 28 page ![]() Data Sheet 15 Rev. 1.1, 2016-01-28 TLE7183QU Description and Electrical Characteristics 5.1.34 Absolute Input Propagation Time Difference (all channels High off - Low on) t P(ahfln) – – 150 ns C=22nF; RLoad=1Ω 5.1.35 Absolute Input Propagation Time Difference (all channels Low off - High on) t P(alfhn) – – 150 ns C=22nF; RLoad=1Ω 5.1.36 Wake Up Time; INH Low to High t INH_Pen – – 20 ms Driver fully functional; Vs=6.5...8V; ENAx=low; CPx=CBx=4.7µF 5.1.37 Wake Up Time; INH Low to High t INH_Pen – – 10 ms Driver fully functional; VS=8..20V; ENAx=low; CPx=CBx=4.7µF; 5.1.38 Wake Up Time Logic Functions; INH Low to High t INH_log – – 10 ms diagnostic, OpAmp working; Vs=6.5...8V; ENAx=low; CPx=CBx=4.7µF 5.1.39 Wake Up Time Logic Functions; INH Low to High t INH_log – – 5 ms diagnostic, OpAmp working; VS=8..20V; ENAx=low; CPx=CBx=4.7µF 5.1.40 INH Propagation Time to Disable the Output Stages t INH_P(O) – – 10 µs Vs=5.5..8V 5.1.41 INH Propagation Time to Disable the Output Stages t INH_P(O) – –8µs Vs=8..20V 5.1.42 INH Propagation Time to Disable the entire Driver IC t INH_P(IC) –– 300 µs – 5.1.43 Supply Voltage Vs for Wake Up V VsWU 6.5 – – V diagnostic, OpAmp working; 5.1.44 Charge Pump Frequency f CP 38 55 72 kHz – Electrical Characteristics MOSFET drivers - Dynamic Characteristics V S = 5.5 to 20V, Tj = -40 to +150°C, fPWM < 25kHz, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. |
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