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M45PE80-VMF6TP データシート(PDF) 23 Page - STMicroelectronics

部品番号 M45PE80-VMF6TP
部品情報  8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
PDF  36 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M45PE80-VMF6TP データシート(HTML) 23 Page - STMicroelectronics

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M45PE80
Release from Deep Power-down (RDP)
Once the device has entered the Deep Power-
down mode, all instructions are ignored except the
Release from Deep Power-down (RDP) instruc-
tion. Executing this instruction takes the device out
of the Deep Power-down mode.
The Release from Deep Power-down (RDP) in-
struction is entered by driving Chip Select (S) Low,
followed by the instruction code on Serial Data In-
put (D). Chip Select (S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 19..
The Release from Deep Power-down (RDP) in-
struction is terminated by driving Chip Select (S)
High. Sending additional clock cycles on Serial
Clock (C), while Chip Select (S) is driven Low,
cause the instruction to be rejected, and not exe-
cuted.
After Chip Select (S) has been driven High, fol-
lowed by a delay, tRDP, the device is put in the
Standby mode. Chip Select (S) must remain High
at least until this period is over. The device waits
to be selected, so that it can receive, decode and
execute instructions.
Any Release from Deep Power-down (RDP) in-
struction, while an Erase, Program or Write cycle
is in progress, is rejected without having any ef-
fects on the cycle that is in progress.
Figure 19. Release from Deep Power-down (RDP) Instruction Sequence
C
D
AI06807
S
2
1
34567
0
tRDP
Stand-by Mode
Deep Power-down Mode
Q
High Impedance
Instruction



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