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TIP36CF データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TIP36CF データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification 1 isc website: www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TIP36CF DESCRIPTION · DC Current Gain- : hFE= 25(Min)@IC = -1.5A · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) · Complement to Type TIP35CF · Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= -1.0A APPLICATIONS · Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A ICM Collector Current-peak -40 A IB Base Current -5 A PC Collector Power Dissipation @TC=25℃ 125 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃ /W |
同様の部品番号 - TIP36CF |
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同様の説明 - TIP36CF |
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