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UTV200 データシート(PDF) 1 Page - Advanced Semiconductor |
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UTV200 データシート(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 40 mA 28 V BVCES IC = 20 mA 50 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V 50 mA hFE VCE = 5.0 V IC = 1.0 A 10 150 --- Cob VCB = 26 V f = 1.0 MHz 36 pF PG VSRW VCE = 26 V POUT = 20 W f = 470 - 860 MHz 8.5 9.5 3:1 dB --- NPN SILICON RF POWER TRANSISTOR UTV200 DESCRIPTION: The ASI UTV200 is Designed for Class A. UHF Television Applications up to 860 MHz. FEATURES INCLUDE: • Internal Input Matching • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 4.5 A VCE 28 V PDISS 80 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC θθθθ JC 1.2 OC/W PACKAGE STYLE .420 4L FLG. 1 = COLLECTOR 2 = EMITTER 3 = BASE |
同様の部品番号 - UTV200 |
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同様の説明 - UTV200 |
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