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MJE340 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 MJE340
部品情報  isc Silicon NPN Power Transistor
PDF  2 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE340 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
1
isc Website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
MJE340
DESCRIPTION
·
Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = 300 V(Min)
·
DC Current Gain-
: hFE = 100(Min) @ IC= 50mA
·
Low Collector Saturation Voltage-
: VCE(sat) = 1.0V(Max.)@ IC= 50mA
·
Complement to the PNP MJE350
APPLICATIONS
·
Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
0.5
A
PC
Collector Power Dissipation
TC=25℃
20
W
Ti
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
6.25
℃
/W


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