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データシートサーチシステム |
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データシートサーチシステム |
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BUX20 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUX20 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BUX20 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 125V(Min) · High Current Capability · Good Linearity of hFE APPLICATIONS · Designed for switching and linear applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO(SUS) Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 50 A ICM Collector Current-Peak 60 A IB Base Current-Continuous 10 A PC Collector Power Dissipation @TC=100℃ 350 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ |
同様の部品番号 - BUX20 |
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同様の説明 - BUX20 |
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