2SCR573D datasheet(1/2 Pages) ISC

部品番号	2SCR573D

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

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1

isc Silicon NPN Power Transistor

2SCR573D

DESCRIPTION

·

Suitable for middle power drivers

·

Low VCE(sat)

VCE(sat)=0.35V@(IC=1A,IB=50mA)

·

Complementary NPN types:2SAR573D

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Low frequency amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

3

A

ICM

Collector Current-Peak

6

A

PC

Collector Power Dissipation

@ TC=25℃

10

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

同様の部品番号 - 2SCR573D

メーカー	部品番号	データシート	部品情報
Rohm	2SCR573D	800Kb / 7P	NPN 3.0A 50V Middle Power Transistor
	2SCR573D3	1Mb / 11P	NPN 3.0A 50V Power Transistor
	2SCR573D3FRA	1Mb / 10P	NPN 3.0A 50V Power Transistor
	2SCR573DA08	804Kb / 7P	NPN 3.0A 50V Middle Power Transistor
	2SCR573DFHG	1Mb / 8P	NPN 3.0A 50V Middle Power Transistor 20161012 - Rev.004

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