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2N6573 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6573 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2N6573 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO = 250V(Min.) · Fast Switching Speed · High Current Capability · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for converters, inverters, pulse-width- modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ |
同様の部品番号 - 2N6573 |
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同様の説明 - 2N6573 |
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