MCP39F511T-ESLASHMQ datasheet(4/62 Pages) MICROCHIP

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MCP39F511

DS20005393B-page 4

 2015 Microchip Technology Inc.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

DVDD .................................................................. -0.3 to +4.5V

AVDD .................................................................. -0.3 to +4.0V

Digital inputs and outputs w.r.t. AGND...............-0.3V to +4.0V

Analog Inputs (I+,I-,V+,V-) w.r.t. AGND ...................-2V to +2V

VREF input w.r.t. AGND ........................ ....-0.6V to AVDD +0.6V

Maximum Current out of DGND pin..............................300 mA

Maximum Current into DVDD pin.................................250 mA

Maximum Output Current Sunk by Digital IO ................25 mA

Maximum Current Sourced by Digital IO.......................25 mA

Storage temperature .....................................-65°C to +150°C

Ambient temperature with power applied......-40°C to +125°C

Soldering temperature of leads (10 seconds) ............. +300°C

ESD on the analog inputs (HBM,MM) .................4.0 kV, 200V

ESD on all other pins (HBM,MM) ........................4.0 kV, 200V

† Notice:

Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated in the operation listings of this specification is

not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

1.1

Specifications

TABLE 1-1:

ELECTRICAL CHARACTERISTICS

Electrical Specifications:

Unless otherwise indicated, all parameters apply at AVDD, DVDD = +2.7 to +3.6V, TA = -40°C to +125°C,

MCLK = 4 MHz, PGA GAIN = 1.

Characteristic

Sym.

Min.

Typ.

Max.

Units

Test Conditions

Power Measurement

Active Power (Note 1)

—

±0.1

—

4000:1 Dynamic Range

on Current Channel

(Note 2)

Reactive Power (Note 1)

—

±0.1

—

4000:1 Dynamic Range

on Current Channel

(Note 2)

Apparent Power (Note 1)

—

±0.1

—

4000:1 Dynamic Range

on Current Channel

(Note 2)

Current RMS (Note 1)

IRMS

—

±0.1

—

4000:1 Dynamic Range

on Current Channel

(Note 2)

Voltage RMS (Note 1)

VRMS

—

±0.1

—

4000:1 Dynamic Range

on Voltage Channel

(Note 2)

Power Factor (Note 1)



—±0.1

—

Line Frequency (Note 1)

—

±0.1

—

Note 1:

Calculated from reading the register values with no averaging, single computation cycle with accumulation interval of 4

line cycles.

Specification by design and characterization; not production tested.

N = Value in the Accumulation Interval Parameter register. The default value of this register is 2 or TCAL =80 ms for

50 Hz line.

Applies to Voltage Sag and Voltage Surge events only.

Applies to all gains. Offset and gain errors depend on the PGA gain setting. See Section 2.0 “Typical Performance

Curves”

for typical performance.

VIN =1VPP = 353 mVRMS @ 50/60 Hz.

Variation applies to internal clock and UART only. All calculated output quantities are temperature compensated to the

performance listed in the respective specification.

Lower baud rates selectable only on system versions 0xFA14 and later.

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