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LTE-R38386-S データシート(PDF) 3 Page - Lite-On Technology Corporation

部品番号 LTE-R38386-S
部品情報  IR Emitter and Detector
PDF  7 Pages
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メーカー  LITEON [Lite-On Technology Corporation]
ホームページ  http://www.liteon.com.tw/databook/default.htm
Logo LITEON - Lite-On Technology Corporation

LTE-R38386-S データシート(HTML) 3 Page - Lite-On Technology Corporation

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Part No. : LTE-R38386-S
BNS-OD-FC 002/A4
IR Emitter and Detector
LTE-R38386-S
3. Absolute Maximum Ratings at TA=25°C
Parameter
Maximum Rating
Unit
Power Dissipation
1.8
W
Peak Forward Current
(300pps, 10μs pulse)
5
A
DC Forward Current
1
A
Reverse Voltage
5
V
Thermal Resistance Junction
10
K/W
Operating Temperature Range
-40°C to + 100°C
Storage Temperature Range
-55°C to + 100°C
Junction Temperature
+140°C
Infrared Soldering Condition
260°C for 10 Seconds Max.
4. Electrical / Optical Characteristics at TA=25°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Radiant Intensity
IE
160
300
-
mW/sr
IF = 1A
Total Radiant Flux
Фe
-
590
-
mW
IF = 1A
Peak Emission Wavelength
λPeak
-
850
-
nm
IF = 1A
Spectral Line Half-Width
Δλ
-
50
-
nm
IF = 1A
Forward Voltage
VF
-
1.8
2.5
V
IF = 1A
Reverse Current
IR
-
-
10
μA
VR = 5V
Rise/Fall Time
Tr/Tf
-
30
-
ns
10%~90%
Viewing Angle
1/2
-
90
-
deg
NOTE:
1.
θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
2
. The dominant wavelength, λd is derived from the CIE chromaticity diagram and represents the single wavelength which defines
the color of the device.
3. Reverse voltage (VR) condition is applied for IR test only. The device is not designed for reverse operation.



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