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LTE-R38386-S データシート(PDF) 3 Page - Lite-On Technology Corporation |
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LTE-R38386-S データシート(HTML) 3 Page - Lite-On Technology Corporation |
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3 / 7 page ![]() 2/6 Part No. : LTE-R38386-S BNS-OD-FC 002/A4 IR Emitter and Detector LTE-R38386-S 3. Absolute Maximum Ratings at TA=25°C Parameter Maximum Rating Unit Power Dissipation 1.8 W Peak Forward Current (300pps, 10μs pulse) 5 A DC Forward Current 1 A Reverse Voltage 5 V Thermal Resistance Junction 10 K/W Operating Temperature Range -40°C to + 100°C Storage Temperature Range -55°C to + 100°C Junction Temperature +140°C Infrared Soldering Condition 260°C for 10 Seconds Max. 4. Electrical / Optical Characteristics at TA=25°C Parameter Symbol Min. Typ. Max. Unit Test Condition Radiant Intensity IE 160 300 - mW/sr IF = 1A Total Radiant Flux Фe - 590 - mW IF = 1A Peak Emission Wavelength λPeak - 850 - nm IF = 1A Spectral Line Half-Width Δλ - 50 - nm IF = 1A Forward Voltage VF - 1.8 2.5 V IF = 1A Reverse Current IR - - 10 μA VR = 5V Rise/Fall Time Tr/Tf - 30 - ns 10%~90% Viewing Angle 2θ1/2 - 90 - deg NOTE: 1. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity. 2 . The dominant wavelength, λd is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device. 3. Reverse voltage (VR) condition is applied for IR test only. The device is not designed for reverse operation. |
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