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MBR4080 データシート(PDF) 4 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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MBR4080 データシート(HTML) 4 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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4 / 6 page ![]() Technical Data Green Products Data Sheet N0771, Rev. B • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • MBR4080/90/100CT Electrical Characteristics: Characteristics Symbol Condition Max. Units Forward Voltage Drop(per leg) * VF1 @ 20 A, Pulse, TJ = 25 °C 0.88 V VF2 @ 20 A, Pulse, TJ = 125 °C 0.74 V Reverse Current (per leg) * IR1 @VR = rated VR TJ = 25 °C 1.0 mA IR2 @VR = rated VR TJ = 125 °C 20 mA Junction Capacitance (per leg) CT @VR = 5V, TC = 25 °C fSIG = 1MHz 800 pF Voltage Rate of Change dv/dt - 10,000 V/ μs * Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Junction Temperature Range TJ - -55 to +150 °C Storage Temperature Range Tstg - -55 to +150 °C Maximum Thermal Resistance Junction to Case RθJC DC operation 2.0 °C/W Approximate Weight wt - 2 g Case Style TO-220AB |
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