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AOB5B65M1 データシート(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOB5B65M1 データシート(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 9 page  Symbol Min Typ Max Units BV CES Collector-Emitter Breakdown Voltage 650 - - V TJ=25°C - 1.57 1.98 TJ=125°C - 1.87 - TJ=175°C - 2.05 - TJ=25°C - 1.8 2.25 TJ=125°C - 1.79 - TJ=175°C - 1.73 - V GE(th) Gate-Emitter Threshold Voltage - 5.1 - V TJ=25°C - - 10 TJ=125°C - - 100 TJ=175°C - - 5000 I GES Gate-Emitter leakage current - - ±100 nA g FS - 4.1 - S C ies - 348 - pF C oes - 36 - pF C res - 13 - pF Q g - 14 - nC Q ge - 3 - nC Q gc - 6.5 - nC I C(SC) - 30 - A R g - 6 - Ω t D(on) - 8.5 - ns t r - 13 - ns t D(off) - 106 - ns t f - 18 - ns E on - 0.08 - mJ E off - 0.07 - mJ E total - 0.15 - mJ t rr - 195 - ns Q rr - 0.24 - µC I rm - 2.78 - A t D(on) - 7 - ns t r - 14 - ns t D(off) - 130 - ns t f - 31 - ns E on - 0.09 - mJ E off - 0.12 - mJ E total - 0.21 - mJ t rr - 273 - ns Q rr - 0.42 - µC I rm - 3.6 - A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. TJ=175°C IF=5A, dI/dt=200A/µs, VCC=400V Diode Reverse Recovery Charge Diode Peak Reverse Recovery Current Turn-On DelayTime TJ=175°C VGE=15V, VCC=400V, IC=5A, RG=60Ω Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Diode Reverse Recovery Time Turn-Off Energy Total Switching Energy Turn-Off Energy Turn-On Rise Time Turn-On DelayTime SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Peak Reverse Recovery Current TJ=25°C IF=5A, dI/dt=200A/µs, VCC=400V Turn-Off Delay Time TJ=25°C VGE=15V, VCC=400V, IC=5A, RG=60Ω Total Switching Energy Turn-Off Fall Time Turn-On Energy Gate to Collector Charge Gate to Emitter Charge VGE=15V, VCC=520V, IC=5A SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) Short circuit collector current VGE=15V, VCC=400V, tsc≤5us, TJ≤175°C Total Gate Charge Gate resistance VGE=0V, VCC=0V, f=1MHz Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Reverse Transfer Capacitance VGE=0V, VCC=25V, f=1MHz VCE=20V, IC=5A VCE=0V, VGE=±30V Forward Transconductance V CE(sat) IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=5A V VCE=650V, VGE=0V VGE=0V, IC=5A V Collector-Emitter Saturation Voltage Output Capacitance Input Capacitance I CES Zero Gate Voltage Collector Current V F Diode Forward Voltage DYNAMIC PARAMETERS µA VCE=5V, IC=1mA Rev.1.0: April 2015 www.aosmd.com Page 2 of 9 |
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