2SD1095 datasheet(2/2 Pages) ISC

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isc Product Specification

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isc Silicon NPN Power Transistor

2SD1095

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 1mA; IB= 0

1200

V(BR)CEO

Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0

800

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

1.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

2.0

ICBO

Collector Cutoff Current

VCB= 1200V; IE= 0

VCB= 1200V; IE= 0; TC=125℃

0.1

ICEO

Collector Cutoff Current

VCE= 800V; IB= 0

0.1

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

0.1

hFE-1

DC Current Gain

IC= 0.3A ; VCE= 5V

hFE-2

DC Current Gain

IC= 1A ; VCE= 5V

Pulsed: Pulse duration = 300 ms, duty cycle = 2.0 %

Switching times; Resistive Load

Rise Time

IC= 1A ;IB1=-IB2= 0.3A; VCC= 400V;

0.5

Storage Time

3.5

Fall Time

0.8

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