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STM8AF6226 データシート(PDF) 70 Page - STMicroelectronics

部品番号 STM8AF6226
部品情報  Automotive 8-bit MCU, with up to 8 Kbyte Flash, data EEPROM, 10-bit ADC, timers, LIN, SPI, IC, 3 to 5.5 V
PDF  106 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8AF6226 データシート(HTML) 70 Page - STMicroelectronics

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Electrical characteristics
STM8AF6213/23/23A/26
70/106
DocID025118 Rev 5
Low speed internal RC oscillator (LSI)
Subject to general operating conditions for VDD and TA.
9.3.5
Memory characteristics
RAM and hardware registers
Flash program memory/data EEPROM memory
General conditions: TA = -40 to 150 °C.
Table 42. LSI oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fLSI
Frequency
-
110(1)
1. Tested in production.
128
150(1)
kHz
tsu(LSI) LSI oscillator wakeup time
-
-
-
7
µs
IDD(LSI) LSI oscillator power consumption
-
-
5
-
µA
Table 43. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Unit
VRM
Data retention mode(1)
1. Minimum supply voltage without losing the data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design, not tested in production.
Halt mode (or reset)
VIT-max(2)
2. Refer to the operating conditions for the value of VIT-max
V
Table 44. Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage
(all modes, execution/write/erase)
fCPU is 0 to 16 MHz
with 0 ws
3.0
-
5.5
V
Operating voltage
(code execution)
2.6
-
5.5
tprog
Standard programming time (including
erase) for byte/word/block
(1 byte/4 byte/64 byte)
--
6.0
6.6
ms
Fast programming time for 1 block
(64 byte)
--
3.0
3.3
tERASE Erase time for 1 block (64 byte)
-
-
3.0
3.3



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