KSMB4N65

KERSMI ELECTRONIC CO.,LTD.

www.kersemi.com

1

Description

This N-channel MOSFETS use advanced trench technology and design to provide

excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

1) Low gate charge.

2) Green device available.

3) Advanced high cell denity trench technology for ultra RDS(ON)

4) Excellent package for good heat dissipation.

TO-263

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

650

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current-1

4.0

A

Continuous Drain Current-T=100℃

2.8

Pulsed Drain Current2

17.6

EAS

Single Pulse Avalanche Energy3

260

mJ

PD

Power Dissipation4

106

W

TJ, TSTG

Operating and Storage Junction Temperature

Range

-55 to

+150

℃

Thermal Characteristics

BVDSS

RDSON

ID

650V

2.7Ω

4A

650V N-channel MOSFET