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2SA1932 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1932 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website： www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1932 DESCRIPTION · High collector breakdown voltage · Complementary to 2SC5174 · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Power amplifier applications. · Driver stage amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IB Base Current-Continuous -0.1 A PC Collector Power Dissipation @Ta=25℃ 1.8 W Collector Power Dissipation @TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
同様の部品番号 - 2SA1932 |
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同様の説明 - 2SA1932 |
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