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2SD201 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD201 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD201 DESCRIPTION · Excellent Safe Operating Area · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min.) · Low Collector Saturation Voltage- · High Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak 10 A PC Collector Power Dissipation @TC=25℃ 50 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
同様の部品番号 - 2SD201 |
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同様の説明 - 2SD201 |
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