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2SD1572 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 2SD1572
部品情報  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1572 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SD1572
DESCRIPTION
·
High DC Current Gain-
: hFE = 1000(Min)@ IC= 4A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)
·
Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 4A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
12
A
PC
Collector Power Dissipation
@TC=25℃
40
W
Collector Power Dissipation
@Ta=25℃
2
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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