Power Module

©2015 Littelfuse, Inc

Specifications are subject to change without notice.

Revised:05/19/15

51

MG0675S-BN4MM

600V 75A IGBT Module

Symbol

Parameters

Test Conditions

Min

Typ

Max

Unit

IGBT

V

GE(th)

Gate - Emitter Threshold Voltage

V

4.9

5.8

6.5

V

V

CE(sat)

Collector - Emitter

Saturation Voltage

I

1.45

1.9

V

I

1.6

V

I

CES

Collector Leakage Current

V

1

mA

V

5

mA

I

GES

Gate Leakage Current

V

-400

400

nA

R

Gint

Integrated Gate Resistor

0

Ω

Q

ge

Gate Charge

V

0.8

μC

C

ies

Input Capacitance

V

4.6

nF

C

res

Reverse Transfer Capacitance

0.145

nF

t

d(on)

Turn - on Delay Time

V

I

R

V

Inductive Load

T

25

ns

T

25

ns

t

r

Rise Time

T

20

ns

T

20

ns

t

d(off)

Turn - off Delay Time

T

210

ns

T

240

ns

t

f

Fall Time

T

60

ns

T

70

ns

E

on

Turn - on Energy

T

0.35

mJ

T

0.5

mJ

E

off

Turn - off Energy

T

2.4

mJ

T

2.8

mJ

I

SC

Short Circuit Current

t

380

A

R

thJCD

Junction-to-Case Thermal Resistance (Per IGBT)

0.6

K/W

Diode

V

F

Forward Voltage

I

1.55

1.95

V

I

1.50

V

I

RRM

Max. Reverse Recovery Current

I

di

T

115

A

Q

rr

Reverse Recovery Charge

6.0

μC

E

rec

Reverse Recovery Energy

1.5

mJ

R

thJC

Junction-to-Case Thermal Resistance (Per Diode)

0.9

K/W

2