Medium Power Amplifier

71 - 86 GHz

Rev. V2

MAAM-011167

7

7

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7

Calibration Plane

All data was measured on die with 200 µm pitch

probes. The calibration plane is at the middle of the

through, 178.5 µm from the middle of the RF pad.

App Note [1] Biasing -

voltages can be increased until the desired

quiescent drain current is reached in each stage.

mA. The performance in this datasheet has been

measured with the gate bias set to the voltage that

gives the stated value of the quiescent current. It is

also

possible

to

regulate the

drain

current

dynamically, to limit the DC power dissipation under

RF drive. To turn off the device, the turn on bias

sequence should be followed in reverse.

App Note [2] Bias Arrangement -

have bypass capacitance (120 pF and 10 nF)

mounted as close to the MMIC as possible.

App Note [3] Wire Bonding -

The loop height of the RF bonds should be

minimized. Where the die is mounted above the

PCB, it is recommended to use Reverse Ball-Stitch-

on-Ball bonds (BSOB). If the die is mounted inside a

cavity on the board, Forward Loop bonding may

result in a lower loop height.

V-shape RF bond with two wires (diameter = 25 µm)

is recommended for optimum RF performance.

RF bond wire length to be minimized to reduce the

inductance effect. Simulations suggest no more than

300 µm. Substrate RF pad can be optimized to

improve the Microstrip to MMIC bond transition as

shown in the example below.