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HMC520ALC4TR-R5 データシート(PDF) 1 Page - Analog Devices

部品番号 HMC520ALC4TR-R5
部品情報  Radio frequency (RF) range: 6 GHz to 10 GHz
PDF  28 Pages
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ホームページ  http://www.analog.com
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HMC520ALC4TR-R5 データシート(HTML) 1 Page - Analog Devices

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6 GHz to 10 GHz,
GaAs, MMIC, I/Q Mixer
Data Sheet
HMC520A
Rev. 0
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringementsof patentsorother
rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2017 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
FEATURES
Radio frequency (RF) range: 6 GHz to 10 GHz
Local oscillator (LO) input frequency range: 6 GHz to 10 GHz
Conversion loss: 8 dB typical at 6 GHz to 10 GHz
Image rejection: 23 dBc typical at 6 GHz to 10 GHz
LO to RF isolation: 43 dB typical
LO to intermediate frequency (IF) isolation: 25 dB typical
Input third-order intercept (IP3): 19 dBm typical
Input power for 1 dB compression (P1dB): 10 dBm typical at
7.1 GHz to 8.5 GHz
Wide IF frequency range: DC to 3.5 GHz
24-terminal, 4 mm × 4 mm, ceramic leadless chip carrier
APPLICATIONS
Point to point microwave radios
Point to multipoint radios
Video satellites (VSATs)
Digital radios
Instrumentation
Automatic test equipment (ATE)
FUNCTIONAL BLOCK DIAGRAM
13
1
3
4
2
NIC
NIC
GND
RF
5
6
GND
NIC
NIC
14 GND
15 LO
16 GND
17 NIC
18 NIC
GND
PACKAGE
BASE
90° HYBRID
HMC520A
Figure 1.
GENERAL DESCRIPTION
The HMC520A is a compact gallium arsenide (GaAs),
monolithic microwave integrated circuit (MMIC), in-phase
quadrature (I/Q) mixer in a 24-terminal, RoHS compliant,
ceramic leadless chip carrier (LCC) package. The device can
be used as either an image reject mixer or a single sideband
upconverter. The mixer uses two standard double balanced
mixer cells and a 90° hybrid fabricated in a GaAs, metal
semiconductor field effect transistor (MESFET) process. The
HMC520A is a much smaller alternative to a hybrid style image
reject mixer and a single sideband upconverter assembly. The
HMC520A eliminates the need for wire bonding, allowing the
use of surface-mount manufacturing techniques.


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