UCS16502S

LINEAR INTEGRATED CIRCUIT

UNISONICTECHNOLOGIESCO.,LTD

7 of 10

www.unisonic.com.tw

QW-R103-108.E

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FUNCTIONAL DESCRIPTION(Cont.)

Fig.6 OLP case

Fig.7 OVP case

OTP

(7) Driver Output Section

The driver-stage drives the gate of the MOSFET and is optimized to minimize EMI and to provide high circuit

efficiency. This is done by reducing the switch on slope when reaching the MOSFET threshold. This is achieved by a

slope control of the rising edge at the driver’s output. The output driver is clamped by an internal 16V Zener diode in

order to protect power MOSFET transistors against undesirable gate over voltage.

The In addition to the gate drive control scheme mentioned, the gate drive strength can also be adjusted

It provides great flexibility for system EMI design.

(8) Inside power switch MOS transistor

Specific power MOS transistor parameter is as “POWER MOS TRANSISTOR SECTION” in electrical

characteristics table.