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2SC5902 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC5902 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Website:www.iscsemi.cn isc & iscsemi isregistered trademark 1 isc Silicon NPN Power Transistor 2SC5902 DESCRIPTION · High Breakdown Voltage · Built-in damper diode type · High Switching Speed · Wide Area of Safe Operation · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for high voltage color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 9 A ICM Collector Current- Peak 14 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
同様の部品番号 - 2SC5902 |
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同様の説明 - 2SC5902 |
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