ESJC60S30 datasheet(1/1 Pages) GETEDZ

部品番号	ESJC60S30

部品情報	300mA 30kV -High Voltage Power Diodes

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メーカー	GETEDZ [GETAI ELECTRONICS DEVICE CO., LTD]

ホームページ	http://www.hvgtsemi.com

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0.3

25

ESJC60S30

GETE ELECTRONIC CO.,LTD n E-mail:

Tel: 0086-20-8184 9628

n Fax: 0086-20-8184 9638 n www.hvgtsemi.com

01

GUANGZHOU * CHINA

www.getedz.com

sales@getedz.com

China Tel:

4001 83 84 85

DO-722 Series

Lead Diameter 1.2mm

22mm

7.5mm

24mm

300mA 30kV -High Voltage Power Diodes

Features

High speed switching

High surge resisitivity for CRT discharge

High reliability design

Avalanche characteristic

Applications

Maximum Ratings and Characteristics

Absolute Maximum Ratings

High reliability resin molded type high voltage

mesa type silicon chip by epoxy resin.

X light Power supply

Laser

Voltage doubler circuit

Microwave emission power

General purpose high voltage rectifier,

Voltage multiplier assembly.

Epoxy resin molded in vacuum,

Have anticorrosion in the surface

diode

in small size package which is sealed a multilayed

Outline Drawings :

Items

Repetitive Peak Renerse Voltage

Average Output Current

Suege Current

Junction Temperature

Allowable Operation Case Temperature

Symbols

VRRM

IO

IFSM

Tj

Tc

Condition

Ta=25°C,Resistive Load

125

-40 to +125

Units

kV

A

A peak

°C

Storage Temperature

Tstg

ESJC60S30

30

peak

Ta=25°C,8.3msec, half sine

Ta=25°C, I

=0.1mA

R

Maximum Reverse Recovery Time

Trr

at 25°C;

Electrical Characteristics (Ta=25°C Unless otherwise specified )

Items

Maximum Forward Voltage Drop

Maximum Reverse Current

Symbols

VF

IR1

IR2

Conditions

at 25°C,VR

at 100°C,V

Units

V

uA

Junction Capacitance

Cj

at 25°C; V R=0V,f=1MHz

--

ESJC60S30

50

5.0

pF

=VRRM

R

=VRRM

--

nS

at 25°C,

F

30

I =0.5I ;

F

I =I (AV);

R

I =0.25I

rr

R

F

at: I

同様の部品番号 - ESJC60S30

メーカー	部品番号	データシート	部品情報
GETAI ELECTRONICS DEVIC...	ESJC60S30	519Kb / 2P	300mA 30kV -High Voltage Silicon Rectifiers

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同様の説明 - ESJC60S30

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