MBRF20100CTG

www.onsemi.com

2

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

V

Average Rectified Forward Current

Total Device

10

20

A

Peak Repetitive Forward Current

20

A

Non−repetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

150

A

Peak Repetitive Reverse Surge Current (2.0

ms, 1.0 kHz)

0.5

A

Operating Junction and Storage Temperature Range (Note 1)

− 65 to +175

°C

dv/dt

10000

V/

ms

RMS Isolation Voltage (t = 0.3 second, R.H.

4500

V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

Rating

Symbol

Value

Unit

Maximum Thermal Resistance, Junction to Case

3.5

°C/W

Lead Temperature for Soldering Purposes: 1/8

″ from Case for 5 Seconds

260

°C

Characteristic

Symbol

Max

Unit

Maximum Instantaneous Forward Voltage (Note 3)

0.85

0.75

0.95

0.85

V

Maximum Instantaneous Reverse Current (Note 3)

0.15

150

mA

2. Proper strike and creepage distance must be provided.

3. Pulse Test: Pulse Width = 300

ms, Duty Cycle ≤ 2.0%.

Figure 1. Typical Forward Voltage Per Diode

Figure 2. Typical Reverse Current Per Diode

0.01

0.1

1.0

10

120

100

80

60

40

20

0

0.5

0

1.0

3.0

5.0

10

20

50

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

100

°C

150

°C