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ADG821 データシート(PDF) 3 Page - Analog Devices |
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ADG821 データシート(HTML) 3 Page - Analog Devices |
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3 / 12 page ![]() REV. 0 ADG821/ADG822/ADG823 –3– Spec RIGHT (VDD = 2.7 V to 3.6 V, GND = 0 V. All specifications –40 C to +125 C, unless otherwise noted.) 1 –40 C to – 40 C to Parameter 25 C +85 C +125 C 2 Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance (RON) 0.7 Ω typ VS = 0 V to VDD, IS = 100 mA; 1.4 1.5 1.6 Ω max Test Circuit 1 On Resistance Match Between 0.16 Ω typ Channels ( ∆R ON) 0.2 0.25 0.28 Ω max VS = 0 V to VDD, IS = 100 mA On Resistance Flatness (RFLAT(ON)) 0.3 0.33 Ω typ VS = 0 V to VDD, IS = 100 mA LEAKAGE CURRENTS VDD = 3.6 V Source OFF Leakage IS (OFF) ±0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V; ±0.25 ±3 ±15 nA max Test Circuit 2 Drain OFF Leakage ID (OFF) ±0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V; ±0.25 ±3 ±25 nA max Test Circuit 2 Channel ON Leakage ID, IS (ON) ±0.01 nA typ VS = VD = 1 V, or 3.3 V; ±0.25 ±3 ±25 nA max Test Circuit 3 DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current IINL or IINH 0.005 µA typ VIN = VINL or VINH ± 0.1 µA max CIN, Digital Input Capacitance 4 pF typ DYNAMIC CHARACTERISTICS 3 tON 48 ns typ RL = 50 Ω, CL = 35 pF, 67 74 78 ns max VS = 1.5 V; Test Circuit 4 tOFF 12 ns typ RL = 50 Ω, C L = 35 pF, 18 20 23 ns max VS = 1.5 V; Test Circuit 4 Break-Before-Make Time Delay, tBBM 40 ns typ RL = 50 Ω, CL = 35 pF, (ADG823 Only) 1 ns min VS1 = VS2 = 1.5V; Test Circuit 5 Charge Injection ±2pC typ VS =1.5 V; RS = 0 Ω, C L = 1 nF; Test Circuit 6 Off Isolation –52 dB typ RL = 50 Ω, C L = 5 pF, f = 1 MHz; Test Circuit 7 Channel-to-Channel Crosstalk –82 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 9 Bandwidth –3 dB 24 MHz typ RL = 50 Ω, C L = 5 pF; Test Circuit 8 CS (OFF) 85 pF typ f =1 MHz CD (OFF) 98 pF typ f =1 MHz CD, CS (ON) 230 pF typ f =1 MHz POWER REQUIREMENTS VDD = 3.6 V Digital Inputs = 0 V or 3.6 V IDD 0.001 µA typ 1.0 2.0 µA max NOTES 1Temperature range: Automotive range: –40 °C to +125°C. 2On resistance parameters tested with I S = 10 mA. 3Guaranteed by design, not subject to production test. Specifications subject to change without notice. |
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