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S3JB データシート(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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S3JB データシート(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 3 page ![]() Production specification SURFACEMOUNTRECTIFIERS S3AB--S3MB Document Number : SMB002AA www.gmicroelec.com 1 FEATURES Low profile package For surface mounted applications High current capability Built-in strain relief, ideal for automated placement Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High temperature soldering: 250℃/10 seconds at terminals MECHANICAL DATA Case: JEDEC DO-214AA,molded plastic over passivated chip Terminals: Solder Plated, solderable per MIL-STD- 750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.003 ounces, 0.093 gram Maximum Ratings(@TA = 25°C unless otherwise specified) Characteristic Symbol S3AB S3BB S3DB S3GB S3JB S3KB S3MB UNITS Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRWS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TL=90℃ IF(AV) 3.0 A Peak forward surge current @ TL = 110°C 8.3mssingle half-sine-wave superimposed on rated load(JEDEC Method) IFSM 100 A Thermal Characteristics Characteristic Symbol S3AB S3BB S3DB S3GB S3JB S3KB S3MB UNITS Typical junction capacitance (NOTE 1) CJ 35 p F Typical thermal resistance (NOTE 2) R θ JA 40 ℃ /W Operating junction and storage temperature range TJ TSTG -55--------+150 ℃ Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Symbol S3AB S3BB S3DB S3GB S3JB S3KB S3MB UNITS Maximum Instantaneous Forward Voltage at 3.0A VF 1.15 V Maximum DC reverse current TA=25℃ at rated DC blocking voltage TA=100℃ IR 10 100 μ A NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts 2. Thermal resistance from junction to ambient and junction to lead P.C.B. mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas Pb Lead-free |
同様の部品番号 - S3JB |
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同様の説明 - S3JB |
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