2

Electrical Specifications

1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.

2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6120 published specifications.

3. This final package part performance is verified by a functional test correlated to actual performance at one or more

frequencies.

4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may

be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)

matching.

Table 1. RF Electrical Characteristics

TA=25°C, Vd=5.0V, Idq=0.45V, Vg=-1V, Zo=50 Ω

Parameter

Min

Typ.

Max

Unit

Operational Frequency, Freq

36

40

GHz

Small-signal Gain, Gain

18

20

dB

Output Power at 1dB Gain Compression, P-1dB

24.5

26

dBm

Relative Third Order Inter-modulation level

(Δf=10MHz, Po=+12dBm, SCL), IM3

-38

dBc

Input Return Loss, Rlin

10

dB

Output Return Loss, Rlout

10

dB

Reverse Isolation, Isolation

45

dB

Table 2. Recommended Operating Range

1. Ambient operational temperature TA = 25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal

Resistance at backside temperature (Tb) = 25°C calculated from measured data.

Description

Min.

Typical

Max.

Unit

Comments

Drain Supply Current, Idq

450

mA

Vd = 5V, Vg set for Id Typical

Gate Supply Operating Voltage, Vg

-1.3

-1

-0.7

V

Idq=450mA

Table 3. Thermal Properties

Parameter

Test Conditions

Value

Channel Temperature, Tch

Tch=150 °C

Thermal Resistance

(Channel-to-Base Plate),

ch-bs

Channel-to-backside Thermal Resistance Tchannel(Tc)=34°C

Thermal Resistance at backside temperature Tb=25°C

Jc = 34 °C/W

Note:

1. Assume SnPb soldering to an evaluation RF board at 85 °C base plate temperatures. Worst case is at saturated output power when DC power

consumption rises to 5.24W with 0.9W RF power delivered to load. Power dissipation is 4.34W and the temperature rise in the channel is 72.9 °C. In

this condition, the base plate temperature must be remained below 82.1 °C to maintain maximum operating channel temperature below 155 °C.

Absolute Minimum and Maximum Ratings

Table 4. Minimum and Maximum Ratings

Description Pin

Min.

Max.

Unit

Comments

Drain Supply Voltage, Vd

5.5

V

Gate Supply Voltage, Vg

-2

0

Power Dissipation, P¬D

3

CW Input Power, Pin

20

dBm

CW

Channel Temperature

+150

°C

Storage Temperature

-65

+155

°C

Maximum Assembly Temperature

+260

°C

30 second maximum

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.