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BAS16WS データシート(PDF) 2 Page - Vishay Siliconix

部品番号 BAS16WS
部品情報  Small Signal Fast Switching Diode
PDF  4 Pages
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BAS16WS データシート(HTML) 2 Page - Vishay Siliconix

  BAS16WS Datasheet HTML 1Page - Vishay Siliconix BAS16WS Datasheet HTML 2Page - Vishay Siliconix BAS16WS Datasheet HTML 3Page - Vishay Siliconix BAS16WS Datasheet HTML 4Page - Vishay Siliconix  
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BAS16WS
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 14-Oct-16
2
Document Number: 85752
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Characteristics
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Relative Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 150 mA
VF
1.250
V
IF = 1 mA
VF
0.715
V
IF = 10 mA
VF
0.855
V
IF = 50 mA
VF
1V
Leakage current
VR = 75 V
IR
1000
nA
VR = 25 V, TJ = 150 °C
IR
30
μA
VR = 75 V, TJ = 150 °C
IR
50
μA
Diode capacitance
VR = 0, f = 1 MHz
CD
2pF
Reverse recovery time
IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 
trr
6ns
18105
VF (V)
T
j = 100 °C
T
j = 25 °C
10- 2
10- 1
102
103
1
10
12
0
17438
f = 1 kHz
T
j = 25 °C
IF (mA)
10
10
2
10
3
10
4
10
-2
10
-1
110
2
10
2
5
2
5
2
5
2
5
18185
Tamb (°C)
0
100
400
500
200
300
100
200
0
17440
VR (V)
0.7
0.8
0.9
1.0
1.1
f = 1 MHz
T
j = 25 °C
2
08
6
410



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