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UGE18ACT データシート(PDF) 2 Page - Vishay Siliconix |
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UGE18ACT データシート(HTML) 2 Page - Vishay Siliconix |
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2 / 5 page ![]() UGE18ACT, UGE18BCT, UGE18CCT, UGE18DCT www.vishay.com Vishay General Semiconductor Revision: 23-Feb-16 2 Document Number: 87920 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL UGE18ACT UGE18BCT UGE18CCT UGE18DCT UNIT Max. instantaneous forward voltage per diode (1) 9.0 A VF 1.1 V 20 A 1.2 5.0 A TJ = 100 °C 0.95 Max. DC reverse current at rated DC blocking voltage per diode TA = 25 °C IR 10 μA TA = 100 °C 300 Max. reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 20 ns Max. reverse recovery time per diode IF = 9.0 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 25 °C trr 30 ns TJ = 100 °C 50 Max. stored charge per diode IF = 9.0 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 25 °C Qrr 20 nC TJ = 100 °C 45 Typical junction capacitance per diode at 4.0 V, 1 MHz CJ 30 pF THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UGE18ACT UGE18BCT UGE18CCT UGE18DCT UNIT Typical thermal resistance from junction to case per diode RJC 4.0 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB UGE18DCT-E3/45 1.85 45 50/tube Tube |
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