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NTP2955G. データシート(PDF) 4 Page - ON Semiconductor

部品番号 NTP2955G.
部品情報  Power MOSFET
PDF  5 Pages
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
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NTP2955G. データシート(HTML) 4 Page - ON Semiconductor

  NTP2955G. Datasheet HTML 1Page - ON Semiconductor NTP2955G. Datasheet HTML 2Page - ON Semiconductor NTP2955G. Datasheet HTML 3Page - ON Semiconductor NTP2955G. Datasheet HTML 4Page - ON Semiconductor NTP2955G. Datasheet HTML 5Page - ON Semiconductor  
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4
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
−10
−5
0
5
10
15
20
25
Figure 7. Capacitance Variation
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 25°C
VGS = −0 V
−VGS
−VDS
VDS = −0 V
CISS
CRSS
CRSS
CISS
COSS
0
2
4
6
8
10
12
04
8
12
16
0
10
20
30
40
50
60
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
QG, TOTAL GATE CHARGE, (nC)
ID = −12 A
TJ = 25°C
QT
QGD
QGS
VGS
VDS
1
10
100
1000
1
10
100
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
RG, GATE RESISTANCE (W)
tr
tf
td(off)
td(on)
VDD = −30 V
ID = −12 A
VGS = −10 V
0
2
4
6
8
10
12
14
0
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
Figure 10. Diode Forward Voltage versus
Current
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
VGS = −0 V
TJ = 25°C
0.1
1
10
100
1000
0.1
1.0
10
100
10
ms
1 ms
100
ms
10 ms
dc
VGS = −10 V
SINGLE PULSE
TJ = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0
50
100
150
200
250
25
50
75
100
125
150
175
Figure 12. Maximum Avalanche Energy
versus Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
ID = −12 A



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