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NVJS3151P データシート(PDF) 2 Page - ON Semiconductor |
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NVJS3151P データシート(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() NTJS3151P, NVJS3151P www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −12 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 10 mV/ °C Zero Gate Voltage Drain Current IDSS VGS = −9.6 V, VDS = 0 V TJ = 25°C −1.0 mA TJ = 125°C −2.5 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±4.5 V ±1.5 mA VDS = 0 V, VGS = ±12 V ±10 mA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 100 mA −0.40 −1.2 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 3.4 mV/ °C Drain−to−Source On Resistance RDS(on) VGS = −4.5 V, ID = −3.3 A 45 60 m W VGS = −2.5 V, ID = −2.9 A 67 90 VGS = −1.8 V, ID = −1.0 A 133 160 Forward Transconductance gFS VGS = −10 V, ID = −3.3 A 15 S CHARGES AND CAPACITANCES Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, VDS = −12 V 850 pF Output Capacitance COSS 170 Reverse Transfer Capacitance CRSS 110 Total Gate Charge QG(TOT) VGS = −4.5 V, VDS = −5.0 V, ID = −3.3 A 8.6 nC Gate−to−Source Charge QGS 1.3 Gate−to−Drain Charge QGD 2.2 Gate Resistance RG 3000 W SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time td(ON) VGS = −4.5 V, VDD = −6.0 V, ID = −1.0 A, RG = 6.0 W 0.86 ms Rise Time tr 1.5 Turn−Off Delay Time td(OFF) 3.5 Fall Time tf 3.9 DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2) Forward Diode Voltage VSD VGS = 0 V, IS = −3.3 A TJ = 25°C −0.85 −1.2 V TJ = 125°C −0.7 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. |
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