Reliability tests

MP23AB01DH

10/12

DocID030017 Rev 1

6

Reliability tests

The device passed all reliability tests on three different assembly lots under the following

conditions in the table below.

Table 7: Tests and summary of results

Test name

Description

Conditions

HTOL: High Temperature

Operating Life

The device is stressed in dynamic configuration, approaching the operative

max. absolute ratings in terms of junction temperature, load current, internal

power dissipation.

Vdd(max) = 3.6 V;

Tamb = 125 °C

JESD22a108

HTS: High Temperature Storage

The device is stored in an unbiased condition at the maximum temperature

allowed by the package materials, sometimes higher than the maximum

operative temperature.

Ta = 125 °C

JESD22a103

PC (JL3): Preconditioning (solder

simulation)

The device is submitted to a typical temperature profile used for surface

mounting, after controlled moisture absorption

TC: Temperature Cycling

The device is submitted to cycled temperature excursions, between a hot

and a cold chamber in air atmosphere

Ta Cycling: -40 °C ±125°C

JESD22a104

ESD (HBM): Electrostatic

Discharge (Human Body Model)

The device is submitted to a high voltage peak on all his pins simulating

ESD stress according to different simulation models.

Voltage ±2000 V

JEDEC / JESD22-A114E

ESD (MM): Electrostatic Discharge

(Machine Model)

Voltage +/-200V

JEDEC/JESD-A115-A

ESD (CDM): Electrostatic

Discharge (Charged Device

Model)

Voltage ±750 V

ANSI / ESD STM 5.3.1

ESDA

LU (CI): Latch-up (Overvoltage

and Current Injection)

The device is submitted to a direct current forced/sunk into the input/output

pins. Removing the direct current, no change in the supply current must be

observed.

Current injection ±200 mA

Overvoltage 1.5 x Vmax

EIA/JESD78

THB: Temperature Humidity Bias

The device is biased in static configuration minimizing its internal power

dissipation, and stored at controlled conditions for ambient temperature and

relative humidity.

Vdd(nom) = 2.7 V

T = 85 ° C / RH = 85%

JESD22a108

LTS: Low Temperature Storage

The device is stored in an unbiased condition at the min. temperature

allowed by the package materials, sometimes lower than the min. op. temp

Ta = -40°C

JESD22a119

MS: Mechanical Shock

The device is submitted to 10000 g / 0.1 ms

5 shocks for each axis.

10000 g / 0.1 ms

5 shocks for each axis,

under bias

MIL STD 883MIL